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Search: "[ keyword: Silicon Carbide ]" (8)
Silicon carbide‑based digitally controlled zero voltage switching dual‑phase interleaved totem‑pole PFC rectifier operating at high frequency
Jinhaeng Jang
Vol. 23, No. 2, pp. 335-344, Feb. 2023
10.1007/s43236-022-00582-z
Review of wide band‑gap technology: power device, gate driver, and converter design
Krishna Ravinchandra  Tan Kheng Suan Freddy  June-Seok Lee  Kyo-Beum Lee  Homer Alan Mantooth 
Vinesh Thiruchelvam  Jerome Ignatius Yuen Yi Xian
Vol. 22, No. 8, pp. 1398-1413, Aug. 2022
10.1007/s43236-022-00470-6
Independent switching technique to remove abnormal output voltage in hybrid active NPC inverters
Min-Geun Song  Seok-Min Kim  Kyo-Beum Lee
Vol. 21, No. 1, pp. 85-93, Jan. 2021
10.1007/s43236-020-00170-z
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke  Zhibin Zhao  Peng Sun  Huazhen Huang  James Abuogo 
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs
Haihong Qin  Ceyu Ma  Ziyue Zhu  Yangguang Yan
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
A SiC MOSFET Based High Efficiency Interleaved Boost Converter for More Electric Aircraft
Haider Zaman  Xiancheng Zheng  Mengxin Yang  Husan Ali  Xiaohua Wu

Vol. 18, No. 1, pp. 23-33, Jan. 2018
10.6113/JPE.2018.18.1.23
6.6 kW On-Vehicle Charger with a Hybrid Si IGBTs and SiC SBDs Based Booster Power Module
Timothy Junghee Han  Jared Preston  David Ouwerkerk
Vol. 13, No. 4, pp. 584-591, Jul. 2013
10.6113/JPE.2013.13.4.584
Physical Modeling of SiC Power Diodes with Empirical Approximation
Leobardo Hern  ez  Abraham Claudio  Marco A. Rodriguez  Mario Ponce 
Alej  ro Tapia
Vol. 11, No. 3, pp. 381-388, May  2011
10.6113/JPE.2011.11.3.381

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718